AB International SUB 1850B Specifications

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Application Report
SNAA058BJuly 2008Revised May 2013
AN-1850 LME49830TB Ultra-High Fidelity High Power
Amplifier Reference Design
.....................................................................................................................................................
ABSTRACT
This application report discusses the design and use of the LME ultra-high fidelity power amplifier input
stage ICs (drivers).
Contents
1 Introduction .................................................................................................................. 3
2 Overview ..................................................................................................................... 3
3 Operational Details ......................................................................................................... 4
3.1 Output Stage Power Dissipation ................................................................................. 6
4 PCB Connections ........................................................................................................... 8
4.1 Input Connections .................................................................................................. 8
4.2 Output Connections ................................................................................................ 8
4.3 Power Supply Connections ....................................................................................... 9
4.4 GND Connection Optimization ................................................................................... 9
4.5 Mute Function ..................................................................................................... 10
4.6 Gain and Frequency Response ................................................................................ 10
5 Output Stage Biasing ..................................................................................................... 11
5.1 V
BE
Multiplier ....................................................................................................... 12
5.2 Bias Stability ...................................................................................................... 17
5.3 Biasing Procedure ................................................................................................ 19
6 Compensation .............................................................................................................. 19
6.1 Single-Pole Compensation ...................................................................................... 19
6.2 Two-Pole Compensation ........................................................................................ 21
7 Performance Graphs 60V) ............................................................................................. 22
8 Board Layer Views ........................................................................................................ 23
9 Bill of Materials ............................................................................................................. 26
List of Figures
1 Simple Power Amplifier Schematic ....................................................................................... 3
2 Source-Follower Output Stage ............................................................................................ 4
3 LME49830 EF125WT1 FET PCB Amplifier Schematic ................................................................ 5
4 Amplifier Module Test Setup GND Connections........................................................................ 9
5 Mute Circuit Reference Voltage ......................................................................................... 10
6 Gain And Low Frequency Response ................................................................................... 11
7 Output Stage DC Biasing V
BE
Multiplier Circuit ........................................................................ 12
8 THD+N Versus Frequency Versus Bias Current ...................................................................... 14
9 100mA Bias Current Distortion Residual ............................................................................... 14
10 100mA Bias Current Output FFT........................................................................................ 15
11 250mA Bias Current Distortion Residual ............................................................................... 15
12 250mA Bias Current Output FFT........................................................................................ 16
13 1A Bias Current Distortion Residual .................................................................................... 16
All trademarks are the property of their respective owners.
1
SNAA058BJuly 2008Revised May 2013 AN-1850 LME49830TB Ultra-High Fidelity High-Power Amplifier Reference
Design
Submit Documentation Feedback
Copyright © 2008–2013, Texas Instruments Incorporated
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Summary of Contents

Page 1 - Amplifier Reference Design

Application ReportSNAA058B–July 2008–Revised May 2013AN-1850 LME49830TB Ultra-High Fidelity High PowerAmplifier Reference Design...

Page 2 - Submit Documentation Feedback

B =1:2è × %+1× 4+; :*V; PCB Connectionswww.ti.comIn order to obtain the lowest level distortion measurements, it is important to make an oscilloscope

Page 3 - 2 Overview

www.ti.comOutput Stage BiasingThe low frequency -3dB roll-off point is 2.9Hz. Additionally, there are component footprints for additionalcapacitors in

Page 4 - 3 Operational Details

Output Stage Biasingwww.ti.comThe LME49830 has a maximum DC bias voltage of 16V for use with just about any MOSFET device. Thehigh output drive curren

Page 5 - Operational Details

www.ti.comOutput Stage BiasingThe QVBE1thermal properties are not an exact match to the MOSFET output device thermal properties. Anadditional, tempera

Page 6

Output Stage Biasingwww.ti.comFigure 8. THD+N Versus Frequency Versus Bias CurrentFigure 9. 100mA Bias Current Distortion ResidualAn under biased outp

Page 7

www.ti.comOutput Stage BiasingFigure 10. 100mA Bias Current Output FFTThe under biased time domain distortion residual is represented above by an FFT

Page 8 - 4.2 Output Connections

Output Stage Biasingwww.ti.comFigure 12. 250mA Bias Current Output FFTA correctly biased time domain distortion residual is represented above by an FF

Page 9 - 4.3 Power Supply Connections

www.ti.comOutput Stage BiasingFigure 14. 1A Bias Current Output FFTA class A bias level shows very low harmonics in number and amplitude. The tradeoff

Page 10 - 4.5 Mute Function

Output Stage Biasingwww.ti.comIt is not possible to measure the exact instantaneous channel temperature of discrete devices. There is atemperature gra

Page 11 - 5 Output Stage Biasing

www.ti.comCompensationFigure 17. Bias Current Change Percent Vs. Heat Sink TemperatureBased on the data above the bias resistors are set to RB1= 392Ω,

Page 12 - Multiplier

www.ti.com14 1A Bias Current Output FFT ... 1715 Bias Curren

Page 13

%%1/2=+6#+.k2è × B × 81LGo Compensationwww.ti.comOne of the features of the LME49830 is the ability to set the amplifier’s slew rate and power bandwid

Page 14 - Output Stage Biasing

www.ti.comCompensationFigure 18 represents a 24V/µs slew rate from a 20pF compensation capacitor. This value is a tad shy ofthe estimated 27V/µs, howe

Page 15

B22=1:2è × %%2× 4%1;=1:2è × 62L( × 6.2G3;= 414G*V Performance Graphs (±60V)www.ti.com(18)The two-pole compensation scheme allows for increased loop ga

Page 16

www.ti.comBoard Layer Views8 Board Layer ViewsFigure 21. PCB Composite View From Top23SNAA058B–July 2008–Revised May 2013 AN-1850 LME49830TB Ultra-Hig

Page 17 - 5.2 Bias Stability

Board Layer Viewswww.ti.comFigure 22. PCB Top Silk Screen View24AN-1850 LME49830TB Ultra-High Fidelity High-Power Amplifier Reference SNAA058B–July 20

Page 18

www.ti.comBoard Layer ViewsFigure 23. PCB Top Layer View25SNAA058B–July 2008–Revised May 2013 AN-1850 LME49830TB Ultra-High Fidelity High-Power Amplif

Page 19 - 6.1 Single-Pole Compensation

Bill of Materialswww.ti.comFigure 24. PCB Bottom Layer View9 Bill of Materials26AN-1850 LME49830TB Ultra-High Fidelity High-Power Amplifier Reference

Page 20

www.ti.comBill of MaterialsReference Value Tolerance Description Manufacturer Part NumberCS1, CS2, CS3, 250V, metalizedCS4, CS10, CS11, 0.1µF 10% poly

Page 21 - 6.2 Two-Pole Compensation

Bill of Materialswww.ti.comReference Value Tolerance Description Manufacturer Part Number¼ Watt metal film, International YageoRT, RF1 6.81kΩ 1% MFR-2

Page 22 - 7 Performance Graphs (±60V)

IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and otherch

Page 23 - 8 Board Layer Views

www.ti.comIntroduction1 IntroductionThe LME49830 EF125WT1 amplifier PCB module showcases the LME ultra-high fidelity power amplifierinput stage ICs (d

Page 24 - Board Layer Views

Operational Detailswww.ti.comWith a 200V operating voltage range, an amplifier solution using the LME49830 is mainly limited by thenumber of output po

Page 25 - Figure 23. PCB Top Layer View

www.ti.comOperational DetailsTable 1. Output Power LevelsLoad 0.1% THD+N 1% THD+N 10% THD+N4Ω 335W 350W 430W8Ω 175W 185W 230WFigure 3. LME49830 EF125W

Page 26 - 9 Bill of Materials

2&:#/2;I=T=:8%%;2::2è;2× 4.; :9; Operational Detailswww.ti.comsafe operating area (SOA) along with the power dissipation capabilities of the provi

Page 27 - Bill of Materials

www.ti.comOperational DetailsDetermining the maximum power dissipation while de-rating the output devices base on case temperaturewith the provided he

Page 28

PCB Connectionswww.ti.com3.1.1 LME49830 Power DIssipationThe LME49830 die is contained in a TO-247 package with a junction-to-ambient thermal resistan

Page 29 - IMPORTANT NOTICE

www.ti.comPCB ConnectionsAn RC output snubber network has been provided on the PCB acting as a high-frequency load. A 0.1µFcapacitor, CSN1is in series

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